Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics

Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics

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The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. New materials are being introduced at a faster pace in all functions of multilevel interconnects--copper as a replacement for aluminum; inorganic and organic, nonporous and porous low-k dielectrics; novel etch stop materials; and Ta-and W-based diffusion barriers. Researchers from around the world come together here to discuss the interrelationships among fundamental materials properties, scientific and technological aspects of materials integration, and interconnect performance, and to stimulate ideas towards new approaches. The volume also explores novel technologies related to air-gap interconnects, 3D interconnects, optical interconnects, and metallization for MEMS and on-chip components, such as inductors, that are approaching dimensions where cross-fertilization of technologies becomes feasible.PRINCIPLE OF THE TECHNIQUE Figure 1 is a schematic set-up for the proposed voltage detection of metal ... Optical beam induced resistance change ( OBIRCH ) in metal line has been observed and investigated ... In Case I (Figure 2 (a)), the externally applied voltage (U) is constant; AI, which will be monitored, is the current ... However, interconnection line length in integrated circuit is getting longer and longer, making the current alteration more and more difficult to account for.


Title:Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics
Author: Andrew J. McKerrow, Materials Research Society. Meeting
Publisher: - 2003
ISBN-13:

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